Global Power Transistors Market

Power Transistors Market Size, Share, Growth Analysis, By Application(Automotive, Industrial, Consumer Electronics, Telecommunications), By Power Rating(Low Power, Medium Power, High Power), By Region - Industry Forecast 2024-2031


Report ID: SQMIG45O2019 | Region: Global | Published Date: March, 2024
Pages: 197 | Tables: 65 | Figures: 77

Power Transistors Market News

  • In April 2022, A 350 V GaN transistor with a maximum RDS (on) of 80 m and a 26 A pulsed output current was made available by EPC. This small size makes it possible to create power solutions that use 10 times less space than silicon-based alternatives
  • In March 2022, A new family of 32T32R discrete solutions from NXP was unveiled allowing for the deployment of 5G radios in urban and suburban regions to be made simpler with smaller, lighter radios. The RF power discrete solutions for 32T32R active antenna systems make use of the company's most recent proprietary gallium nitride (GaN) technology and expand its current line of GaN power amplifiers.
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FAQs

 

Details about each competitor are included in the competitive landscape for power transistors. Corporate overview, financials, revenue generated, market potential, investments in R&D, new market initiatives, regional presence, corporate strengths and weaknesses, product introduction, product width and breadth, and application domination are among the details provided. Only the firms' concentration on the power transistor market is referenced in the aforementioned data points. ' Infineon Technologies AG (Germany)', 'Texas Instruments Incorporated (USA)', 'Mitsubishi Electric Corporation (Japan)', 'STMicroelectronics N.V. (Switzerland)', 'Toshiba Corporation (Japan)', 'Vishay Intertechnology, Inc. (USA)', 'Fuji Electric Co., Ltd. (Japan)', 'Renesas Electronics Corporation (Japan)', 'ROHM Semiconductor (Japan)', 'NXP Semiconductors N.V. (Netherlands)', 'Microchip Technology Inc. (USA)', 'ON Semiconductor Corporation (USA)', 'Fairchild Semiconductor International, Inc. (USA)', 'Maxim Integrated Products, Inc. (USA)', 'Semikron International GmbH (Germany)', 'IXYS Corporation (USA)', 'Cree, Inc. (USA)', 'Panasonic Corporation (Japan)', 'Transphorm Inc. (USA)', 'United Silicon Carbide Inc. (USA)', 'ABB Ltd. (Switzerland)', 'Hitachi, Ltd. (Japan)'

With the increasing focus on reducing carbon emissions and achieving sustainable development, there is a growing adoption of renewable energy sources such as solar and wind power. This has led to the demand for power transistors that can handle high power and voltage levels in renewable energy systems.

Wide bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) are gaining popularity due to their high thermal conductivity, high breakdown voltage, and low power loss. The adoption of wide bandgap materials is expected to increase in the coming years, which will drive the growth of the power transistors market.

Because of the rising demand for electronic devices and the expanding automotive industry in nations like China and India, the Asia-Pacific region is anticipated to experience the fastest growth in the power transistor market during the forecast period. Due to the rising popularity of smartphones and other electronic gadgets, the consumer electronics industry is the dominating sector in this area.

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Global Power Transistors Market

Report ID: SQMIG45O2019

$5,300
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